• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A process for producing phosphorous-doped silicon monocrystals having a select peripheral depletion or enrichment of dopant atoms along the radial direction of such monocrystals comprises providing a silicon monocrystalline rod homogeneously doped with phosphorous, as by neutron doping, and subjecting such homogeneously doped monocrystalline rod to a peripheral zone melt cycle in a select atmosphere such that the peripheral melt zone depth within the monocrystalline rod is controlled so as to be less than the radius of the rod in accordance with the desired peripheral dopant concentration in the ultimately attained rod.
    公开号:SU793412A3
    申请号:SU762418282
    申请日:1976-11-11
    公开日:1980-12-30
    发明作者:Келлер Вольфганг；Крамер Херберт；Ройшель Конрад
    申请人:Сименс Аг (Фирма)；
    IPC主号:
    专利说明:

    one
    This invention relates to methods for producing silicon single crystals doped with phosphorus impurity, with a given boundary depletion of the impurity material in the radial direction.
    In the production of special semiconductor devices, for example, powerful shafting thyristors, in which their blocking and blocking voltages are maintained at the same level, silicon crystals with a uniform impurity distribution in the middle of the plate and a certain increase in resistivity along the edges are used.
    A known method for producing silicon mono- | 5 crystals with a uniform n-type impurity by irradiation with thermal neutrons. Available in silicon isotopes
    Si, when absorbing a thermal neutron and emitting f-radiation, transforms into an unsteady Si isotope, which, when emitted, radiation with a half life of 2.62 h, transforms into a stable phosphorus isotope R. This achieves a uniform doping (without
    strips) regardless of the diameter and length of it. In this way, a silicon silicon is obtained with a specific resistance of 30 ohm "cm, with a constant uniform impurity distribution.
    To increase the breakdown voltage along the edges of the plate, it is necessary to obtain a decrease. The distribution of the supply is.
    The purpose of the invention is to obtain, by the edge of the sterol, a radially specified impurity concentration.
    This is achieved by the fact that, after irradiation, the rod is subjected to zone melting in vacuum using a single-turn coil, the diameter of which is larger than the diameter of the rod maximum 10 mm, and at a depth of the melt zone along the edges of the rod equal to 1 / 10-1USD of the diameter of the rod.
    Fig, 1 is a schematic representation of the zone melting process; in fig. 2 is a characteristic of the resistivity of the source material obtained by irradiating with thermal neutrons; in fig. 3 - Resistivity characteristic after zone melting.
    A device from the original silicon rod 1, a single-turn coil 2 connected to a power source 3. Zonal smelting is carried out to a depth of 1/10 to 1/3 of the rod diameter, area T. The melt zone 4 with a depth T less than the radius of the silicon rod 1, is stirred at least once along the ingot using ish kcyinoy heating coil 2. The required number of phosphorus atoms, corresponding to the degree and depth of the impoverished impurity, is evaporated from the surface of the melt zone 4 while adjusting the following parameters: V.C. power. energy of the induction heating coil, the shape of the heating coil and the size of the gap between the ingot and the inner surface of the coil, the velocity of the melt zone, the number of passes of the melt zone.
    In order to obtain a characteristic with (H1, corresponding to Fig. 3, the following parameters are set: ingot diameter S3 mm ;, internal diameter of the roll 60 mm; height of the melt zone 7 mm; depth of the melt zone S mm; speed mixed 2 mm / min; number of zones 1 .
    Residual pressure 10 tor.
    The rotation of the rod 2-10 rev / min.
    It is possible to simultaneously move several katushiks along the ingot, by gfich on
    they can be supplied in different capacities. The method is applicable to ingots of any crystallographic orientation.
    FIG. 2 and 3, as the ordinate, the resistivity value f, and the distance from one edge of the plate to the other is plotted along the abscissa. Point lnnn passes in the middle of the plate. To obtain silicon with the characteristic of FIG. 3, the silicon rod is subjected to zone melting in a vacuum (10 torr).
    The resulting silicon is used to create powerful thyristors.
    权利要求:
    Claims (1)
    [1]
    Formula invented
    The method of obtaining silicon single crystals doped with phosphorus impurity by irradiating with thermal neutrons, characterized in that, in order to obtain an impurity concentration specified in the radial direction along the rod edge, after irradiation, the rod is subjected to zone melting in a vacuum using a single-turn coil, the diameter of which is greater than the diameter of the rod at a maximum of 10 mm, and with the depth of the melt zone along the edges of the rod equal to 1 / 10-1 / 3 of the diameter of the rod.
    / z4
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    US3607109A|1971-09-21|Method and means of producing a large diameter single-crystal rod from a polycrystal bar
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    CA1165469A|1984-04-10|High voltage diode structures and method for theirpreparation
    同族专利:
    公开号 | 公开日
    FR2331378B3|1979-07-20|
    GB1542868A|1979-03-28|
    JPS6046072B2|1985-10-14|
    JPS5261955A|1977-05-21|
    CA1085703A|1980-09-16|
    FR2331378A1|1977-06-10|
    US4126509A|1978-11-21|
    DK512476A|1977-05-15|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US2854363A|1953-04-02|1958-09-30|Int Standard Electric Corp|Method of producing semiconductor crystals containing p-n junctions|
    DE1164680B|1958-05-21|1964-03-05|Siemens Ag|Process for the production of rod-shaped semiconductor bodies of high purity|
    US3092462A|1960-01-28|1963-06-04|Philips Corp|Method for the manufacture of rods of meltable material|
    NL104013C|1960-06-28|
    DE1303150B|1961-01-13|1971-05-13|Philips Nv|
    DE1519903A1|1966-09-24|1970-02-12|Siemens Ag|Process with crucible-free zone melting of a crystalline rod|
    US3773499A|1968-04-03|1973-11-20|M Melnikov|Method of zonal melting of materials|
    BE788026A|1971-08-26|1973-02-26|Siemens Ag|METHOD AND DEVICE FOR DIRECTED INTRODUCTION OF DOPING MATERIALS INTO SEMICONDUCTOR CRYSTALS DURING A CRUCIBLE ZONE MELTING|
    DE2234512C3|1972-07-13|1979-04-19|Siemens Ag, 1000 Berlin Und 8000 Muenchen|Process for the production of (reoriented semiconductor single crystal rods with a specific resistance thawing towards the center of the rod|
    DE2338338C3|1973-07-27|1979-04-12|Siemens Ag, 1000 Berlin Und 8000 Muenchen|Device for doping during crucible-free zone melting of a semiconductor crystal rod|
    FR2257998B1|1974-01-10|1976-11-26|Commissariat Energie Atomique|US4270972A|1980-03-31|1981-06-02|Rockwell International Corporation|Method for controlled doping semiconductor material with highly volatile dopant|
    GB2082933B|1980-09-03|1984-10-03|Westinghouse Electric Corp|High voltage semiconductor materials and structures and method for their|
    JPS63115766U|1987-01-20|1988-07-26|
    CN100351435C|2005-09-29|2007-11-28|天津市环欧半导体材料技术有限公司|Process for preparing gas phase doped float-zone silicon monocrystal for solar cell|
    CN100339513C|2006-04-19|2007-09-26|天津市环欧半导体材料技术有限公司|Electric control system of zone-melted silicon single crystal furnace|
    CN1325701C|2006-04-26|2007-07-11|天津市环欧半导体材料技术有限公司|Process for preparing vapor pre-doping and neutron irradiation doping combined zone-melted silicon single crystal|
    CN1325702C|2006-04-26|2007-07-11|天津市环欧半导体材料技术有限公司|Process for preparing zone-melted vapor doping solar cell silicon single crystal|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    DE19752551281|DE2551281A1|1975-11-14|1975-11-14|Silicon bars doped using phosphorus - with variable resistance in radial direction, suitable for mfg. power thyristors|
    DE19752551301|DE2551301C3|1975-11-14|1975-11-14|Process for the production of phosphorus-doped silicon monocrystals with marginal protection of the dopant in a radial direction|
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